Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3
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چکیده
منابع مشابه
Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure
In this report, we study the effectiveness of hydrogen plasma surface treatments for improving the electrical properties of GaSb/Al2O3 interfaces. Prior to atomic layer deposition of an Al2O3 dielectric, p-GaSb surfaces were exposed to hydrogen plasmas in situ, with varying plasma powers, exposure times, and substrate temperatures. Good electrical interfaces, as indicated by capacitance-voltage...
متن کاملIntroduction to (plasma-enhanced) atomic layer deposition
Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...
متن کاملDirect Growth of Al2O3 on Black Phosphorus by Plasma-Enhanced Atomic Layer Deposition
Growing high-quality and uniform dielectric on black phosphorus is challenging since it is easy to react with O2 or H2O in ambient. In this work, we have directly grown Al2O3 on BP using plasma-enhanced atomic layer deposition (PEALD). The surface roughness of BP with covered Al2O3 film can reduce significantly, which is due to the removal of oxidized bubble in BP surface by oxygen plasma. It w...
متن کاملHigh-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma- enhanced atomic layer deposited AlN for Fermi-level unpinning
Please cite the original version: Jussila, H. & Mattila, P. & Oksanen, J. & Perros, A. & Riikonen, J. & Bosund, M. & Varpula, A. & Huhtio, T. & Lipsanen, Harri & Sopanen, M. 2012. High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning. Applied Physics Letters. Volume 100, Issue 7. P. 071606/1-4. ISSN 0003-6...
متن کاملThe Role of Magnetic Field in Atomic Layer Deposition of Al2O3 Thin Films Enhanced by Radio Frequency Plasma
As a media aluminum oxide (Al2O3) thin films deposited by radio frequency plasma-assisted atomic layer deposition (RF-PA-ALD) method were employed to explore the magnetic field effect. Different from normal plasma-assisted ALD (PA-ALD) technology a magnetic field was applied during the whole deposition process. With this novel ALD technology it obtains that the deposition rate in each cycle of ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2010
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.3492847